Pay-Per-View Purchase provides access to a PDF of the full-text. Ta (Tantalum) NaCl (Sodium chloride) CaWO4 (Calcium tungstate) Ne (Neon) 비정질(Amorphous) & 폴리실리콘 결정질과 비결정질 실리콘의 두께, 결정도, 굴절률, 흡수율 측정 하기. SUMS - IEN - IEN - Micro/Nano Fabrication Facility - a: All data is updated as the date indicated above. MgF2 (Magnesium fluoride) LuAl3(BO3)4 (Lutetium aluminium borate, LuAB)
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To view this article you will need to login or make a payment. 1993: n,k 0.26-0.83 µm; 450 °C Click here to learn more. stream Note the Boolean sign must be in upper-case. W (Tungsten) These devices consist of films with thicknesses of about 1 ,um and it is important to know the refractive index and absorption coefficient as function of wavelength to predict the photoelectric behaviour of a device. CdTe (Cadmium telluride) MoTe2 (Molybdenum ditelluride) LiBr (Lithium bromide)
OSA Members: $15/articleNon-OSA Members: $35/article. 1. Jellison 1992: n,k 0.234-0.840 µm KNbO3 (Potassium niobate) 1) D. T. Pierce and W. E. Spicer, Electronic structure of amorphous Si from photoemission and optical studies, Phys.
GaP (Gallium phosphide) These devices consist of films with thicknesses of about 1 ,um and it is important to know the refractive index … Dy2O3 (Dysprosium sesquioxide) High-accuracy, midinfrared (450 cm −1 ≤ ω ≤ 4000 cm −1) refractive index values of silicon, J. Appl. Filmetrics offers a full range of products for measuring semiconductor process films. Comments. 1993: n,k 0.26-0.83 µm; 150 °C Sr (Strontium) Pb (Lead) Ar (Argon) PbS (Lead sulfide)
TiC (Titanium carbide) Bi (Bismuth) Rh (Rhodium) untitled Ni (Nickel) Li 1980: n 1.2-14 µm; 293 K Ho (Holmium) Ta2O5 (Tantalum pentoxide) A model for the refractive index of amorphous silicon for FDTD simulation of photonics waveguides A. Fantoni1,2,*, P.Lourenço3, M. Vieira1,2,3 1ISEL-ADEETC, Rua Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal 2 CTS-UNINOVA, Quinta da Torre, Monte da … WS2 (Tungsten disulfide) Chromium (Cr)
CuGaS2 (Copper gallium sulfide) Lu2O3 (Lutetium sesquioxide) Vuye et al. Joint Poster Session IIA (JTu1A), Younghwan Yang, Gwanho Yoon, Sunghak Park, Seok Daniel Namgung, Ki Tae Nam, and Junsuk Rho, Younghwan Yang, Gwanho Yoon, Sunghak Park, Seok Daniel Namgung, Ki Tae Nam, and Junsuk Rho*, Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of KoreaNational Institute of Nanomaterials Technology (NINT), Pohang 37673, OSA Technical Digest Vuye et al. HfO2 (Hafnium dioxide, Hafnia) c: Film thickness variation across a 4” wafer, defined as (max-min)/average. Vuye et al. Na (Sodium) RbTiOPO4 (Rubidium titanyl phosphate, RTP) We found the correlation between atomic bonding structures and the refractive index in the visible spectrum. 60-nm film. We found that optical hydrogenated amorphous silicon exhibits the extinction coefficient of 0.082 at the wavelength of 450 Se (Selenium) Process Films. Use these formats for best results: Smith or J Smith, Use a comma to separate multiple people: J Smith, RL Jones, Macarthur.
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ZnGeP2 (Zinc germanium phosphide, ZGP) LiIO3 (Lithium iodate) LiNbO3 (Lithium niobate) at 632.8 nm are 3 0 obj Acrobat Distiller 9.0.0 (Windows) MgAl2O4 (Magnesium aluminate, spinel)
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For a typical sample of Amorphous Silicon the refractive index and extinction coefficient at 632.8 nm are 4.49977 and 0.2432256. ORGANIC - organic materials No guarantee of accuracy - use at your own risk.
Xe (Xenon)
KI (Potassium iodide) Academic Press, Boston, 1985 (ref. All Rights Reserved, Only if other resources available (images, video, datasets), • Use these formats for best results: Smith or J Smith. PbMoO4 (Lead Molybdate) CsF (Cesium fluoride) BeO (Beryllium monoxide) MoS2 (Molybdenum disulfide)
Amorphous silicon or hydrogenated a-Si:H is an important material for photovoltaic devices. Example: (diode OR solid-state) AND laser [search contains "diode" or "solid-state" and laser], Example: (photons AND downconversion) - pump [search contains both "photons" and "downconversion" but not "pump"]. $5�: Yf�����4㊆y��/�yol��y�K���̍=�%Ӟ�Y��'9δ�}����b� ���_ԗ�r�L��J�3��m�tp��@���-/j}b�~[HB8�A:�{�I��i�%� ����4���J�-�@p��hk,$�R�@��J�S@BꍧU؇�U�H�J�Z$��Ñ�T����l����O����J�QG�Vl�e[;+�=���y�/8����^������^xE�sܳ�ڧ�[��+�`t������^1��?�K���a?�:��|E̯֕&%�n⊨�D����Mz�Vp��U:xs #�����W�F������ħ+�>�$��kI��҅=�souK��M�g��aéc�@����i7b�=����cƟ��4 ���U���{vF�cO�Mk]L��!�yD�a�Ѕ*�&���T��鰼�l��Ӏ#k-�{4���aF{���w�m)�M��.cA�Lܵ=�uwe�. Nb (Niobium) REFRACTIVE INDEX OF AMORPHOUS AND POLYCRYSTALLINE SI 157 01, (crri') 5 10 ooo +o 4 t. 10 1` 103 1.5 2.0 2.5 E(eV) Fig. Y. Yang, G. Yoon, S. Park, S. D. Namgung, K. T. Nam, and J. Rho, "The tailored complex refractive index of hydrogenated amorphous silicon for dielectric metasurfaces,"
Ag3AsS3 (Silver arsenic sulfide)
BiFeO3 (Bismuth ferrite, BFO) We found that optical hydrogenated amorphous silicon exhibits the extinction coefficient of 0.082 at the wavelength of 450 nm.
Variation in optical absorption a .with photon energy E in amorphous silicon thin films: Q +1 858-573-9300
Vuye et al. The table below contains links to refractive index data for common materials. Ti (Titanium) Li 1980: n 1.2-14 µm; 550 K Vuye et al. Li 1980: n 1.2-14 µm; 350 K WSe2 (Tungsten diselenide) B 5, 3017-3029 (1972) 2) Handbook of Optical Constants of Solids, Edward D. Palik, ed. Ir (Iridium)